Search results for "Electron hole"
showing 10 items of 15 documents
The role of Fe and Cu dopants in electron–hole trapping and relaxation process in congruent LiNbO3
2003
Abstract The transient optical absorption and kinetics of absorption decay is studied in undoped, Fe doped, and Cu doped LiNbO 3 crystals irradiated by pulsed electron beam. The 1.6 eV band of electron polaron trapped at antisite niobium was observed in all crystal samples. The nature of centers responsible for transient absorption is discussed. Electron polarons are shown to be less stable in LiNbO 3 :Fe compared with LiNbO 3 :Cu and undoped LiNbO 3 . It is suggested that a major part of electrons and holes created by irradiation are trapped in the vicinity of dopants.
Some working principles of heterogeneous photocatalysis by semiconductors
1993
The present paper outlines some of the principles which are the working base for the photocatalytic processes: we refer to those photocatalytic processes performed using irradiated semiconductors. The steps related to the photoproduction of electron-hole pairs and their separation are discussed. It is also shown how the step of pair separation induces the formation of various chemical species, some of which are useful for the oxidation reactions. It is also shown that in order to reach a detailed description of photocatalytic processes it is necessary to have the knowledge of both the electronic and the physicochemical features of the semiconductors. The paper finally reports a case study r…
Time‐resolved absorption and luminescence following electron‐hole pair creation in ZnO
2008
We report transient absorption induced by electron-hole excitation in undoped ZnO. A laser pump/continuum probe method covers 2–300 ps, and an electron pulse with lamp transmission covers 8–300 ns. The broad absorption spectrum increases monotonically with wavelength from 900 to 1600 nm. Following a reasonable hypothesis that the free-carrier-like induced infrared absorption is proportional to the total number of free carriers, excitons, and shallow-trapped carriers in the sample, these data allow setting an upper limit on the quantum efficiency of a specified lifetime component of luminescence. For the undoped commercial ZnO studied in this report, the quantum efficiency of room temperatur…
How does graphene enhance the photoelectric conversion efficiency of dye sensitized solar cells? An insight from a theoretical perspective
2019
The main goal of this work is to clearly answer the question from a theoretical perspective: how does graphene enhance the photoelectric conversion efficiency in the semiconducting layer of a dye sensitized solar cell? Several arrangements of the graphene layer between the dye molecule and the TiO2 (101) surface are carefully studied and discussed. The dynamic interfacial electron propagations are simulated with consideration of the underlying nuclear motion effect. Theoretical investigation shows that graphene can speed up the electron injection from the dye molecules to the semiconductor layer, only when the graphene sheet is bonded to the TiO2 surface via C–Ti bonds. The excited electron…
Oscillator strength reduction induced by external electric fields in self-assembled quantum dots and rings
2007
We have carried out continuous wave and time resolved photoluminescence experiments in self-assembled In(Ga)As quantum dots and quantum rings embedded in field effect structure devices. In both kinds of nanostructures, we find a noticeable increase of the exciton radiative lifetime with the external voltage bias that must be attributed to the field-induced polarizability of the confined electron hole pair. The interplay between the exciton radiative recombination and the electronic carrier tunneling in the presence of a stationary electric field is therefore investigated and compared with a numerical calculation based on the effective mass approximation.
First-principles calculations of iodine-related point defects in CsPbI3
2019
Many thanks to A. Lushchik, A. Popov and R. Merkle for numerous fruitful discussions. This study was partly supported by the Latvian Council for Science (grant LZP-2018/1-0147 to EK). R.A.E acknowledges the assistance of the University Computer Center of Saint-Petersburg State University for high-performance computations.
Surface band-gap narrowing in quantized electron accumulation layers.
2010
An energy gap between the valence and the conduction band is the defining property of a semiconductor, and the gap size plays a crucial role in the design of semiconductor devices. We show that the presence of a two-dimensional electron gas near to the surface of a semiconductor can significantly alter the size of its band gap through many-body effects caused by its high electron density, resulting in a surface band gap that is much smaller than that in the bulk. Apart from reconciling a number of disparate previous experimental findings, the results suggest an entirely new route to spatially inhomogeneous band-gap engineering.
Elastic, electronic and optical properties of boron- and nitrogen-doped 4,12,4-graphyne nanosheet
2020
Abstract The effects of boron (B) and nitrogen (N) dopants on 4,12,4-graphyne have been systematically investigated with density functional theory (DFT) calculations. The charge density analysis reveals that the N dopant at the sp-site destroys the acetylenic linkage in 4,12,4-graphyne, but instead tends to form a polar bond. The B- and N-doped 4,12,4-graphyne systems exhibit p- and n- semiconductor characters, respectively. Some obvious spin splitting polarizations can be observed in their band structures and DOS. Moreover, there is a giant difference in effective masses between electrons and electron holes, especially for B-doped 4,12,4-graphyne at C5 site. The directional electron and el…
Theoretical and Experimental Study of the Crystal Structures, Lattice Vibrations, and Band Structures of Monazite-Type PbCrO4, PbSeO4, SrCrO4, and Sr…
2015
The crystal structures, lattice vibrations, and electronic band structures of PbCrO4, PbSeO4, SrCrO4, and SrSeO4 were studied by ab initio calculations, Raman spectroscopy, X-ray diffraction, and optical-absorption measurements. Calculations properly describe the crystal structures of the four compounds, which are isomorphic to the monazite structure and were confirmed by X-ray diffraction. Information is also obtained on the Raman- and IR-active phonons, with all of the vibrational modes assigned. In addition, the band structures and electronic densities of states of the four compounds were determined. All are indirect-gap semiconductors. In particular, chromates are found to have band gap…
Electron-hole duality and vortex rings in quantum dots
2004
In a quantum-mechanical system, particle-hole duality implies that instead of studying particles, we can get equivalent information by studying the missing particles, the so-called holes. Using this duality picture for rotating fermion condensates the vortices appear as holes in the Fermi see. Here we predict that the formation of vortices in quantum dots at high magnetic fields causes oscillations in the energy spectrum which can be experimentally observed using accurate tunnelling spectroscopy. We use the duality picture to show that these oscillations are caused by the localisation of vortices in rings.